Source/Load-Pull Noise Measurements at Ka Band

This paper is focused on the extraction of noise parameters a linear active device by exploiting both forward and reverse power measurements associated with different terminations. In order for load-pull to yield significant marginal improvement (as compared only) it expected that under test should appreciably deviate from unidirectionality. For this reason, source/load-pull technique applied frequencies at which considered devices are still usable but their factor exhibits measurable dependence output Details bench set up purpose, covering 20–40 GHz frequency range, provided. A characterization campaign 60 nm gate length, 4×35 µm GaN-on-Si HEMT fabricated OMMIC illustrated.